NXH100B120H3Q0PTG

Overview

The NXH100B120H3Q0PTG is a dual N-channel IGBT module from onsemi, utilizing trench field-stop technology. It features a Q0BOOST surface-mount package with 22 pins and measures 66.2 mm in length, 32.5 mm in width, and 11.9 mm in height. The device supports a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 50 A. Maximum power dissipation is rated at 186 W, with an operating temperature range from -40°C to +150°C.

Feature Summary

• Dual independent configuration for flexible circuit design
• Trench field-stop technology for optimized switching performance
• Surface-mount Q0BOOST package for automated assembly

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency welding equipment

Procurement Notes

Verify the specific suffix against official documentation to confirm pinout compatibility and thermal characteristics. Ensure that the selected variant matches the required mounting style and electrical ratings for the target application. Cross-reference datasheet revisions to confirm material compliance and manufacturing origin changes.

Selection Notes

Select this component based on the 1200 V blocking capability and 50 A current rating requirements. Evaluate the thermal resistance and package dimensions to ensure adequate heat sinking and board space. Confirm that the gate drive voltage aligns with the specified Vge limits for optimal saturation voltage and switching speed.

Part Context

This part belongs to the NXH100 series of IGBT modules from onsemi. It shares the Q0BOOST package form factor with other variants in the lineup, such as NXH100B120H3Q0SG. The series is designed for high-efficiency power conversion applications requiring robust performance in compact surface-mount configurations.

Replacement Considerations

NXH100B120H3Q0PG is a confirmed substitute within the same family.