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Product Detailed Parameters
- Description：1500V F2 BOOST FOR SOLAR PIM
- Series：-
- Mfr：onsemi
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Level Inverter
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 100A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：36-PIM (56.7x48)
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：93 W
- Current - Collector Cutoff (Max)：200 µA
- Input Capacitance (Cies) @ Vce：6.523 nF @ 20 V
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Overview
The NXH200B100H4F2SG is a boost power module containing high-performance IGBTs with rugged anti-parallel diodes and an onboard thermistor. It utilizes F2 trench field stop technology for low switching loss. The module features a BOOST section (T1/T2, D1/D2) rated at 1000 V collector-emitter voltage and 100 A continuous current, and a PATH section (T3, D3) with identical voltage ratings but distinct thermal characteristics. Boost diodes (D4/D5) are rated at 1200 V reverse voltage. The package includes solder pins for mounting.
Feature Summary
- Extremely efficient Trench with Field Stop Technology
- Low switching loss reduces system power dissipation
- F2 Package with Solder Pins
Applications
- Solar Inverter
- Uninterruptible Power Supplies
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm shipping configuration. The standard SG suffix indicates blister tray packaging containing twenty units per tray. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this module for applications requiring integrated boost and path stages within a single compact footprint. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance values. Verify that the gate drive voltage range aligns with the recommended operating limits of plus or minus twenty volts for reliable switching performance.
Part Context
This component belongs to onsemi's EliteSiC product family utilizing silicon technology. It is designed as a specialized boost power module intended for high-efficiency power conversion systems. The device integrates multiple semiconductor chips into a single insulated metal substrate structure to minimize parasitic inductance.
Replacement Considerations
Direct pin-to-pin replacements require matching electrical ratings and thermal profiles. Consult the official datasheet for compatible alternative part numbers within the same product family that share identical package dimensions and terminal configurations.
