NXH200T120H3Q2F2STNG

Overview

The NXH200T120H3Q2F2STNG is a silicon/silicon carbide hybrid power module from onsemi, designed for high-efficiency industrial applications. It integrates an IGBT with a Silicon Carbide MOSFET in a half-bridge configuration within the Q2PACK-200A package. The device features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 200 A at 25°C. Key electrical parameters include a typical saturation voltage of 2.4 V for the IGBT leg and a forward voltage of 2.8 V for the SiC MOSFET leg. The module supports a maximum junction temperature of 175°C and utilizes press-fit termination technology for robust mechanical mounting.

Feature Summary

• Hybrid topology combining silicon IGBTs with silicon carbide MOSFETs to optimize switching losses and conduction performance.
• Q2PACK-200A press-fit packaging ensures secure connection and reliable thermal transfer without soldering.
• High thermal stability rated for operation up to 175°C junction temperature.

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Procurement Notes

Verify the specific suffix 'STNG' against official datasheets to confirm terminal plating and RoHS compliance status. Confirm that the required driver circuitry matches the gate charge specifications. Ensure the PCB or busbar design accommodates the specific press-fit pin geometry of the Q2PACK-200A form factor.

Selection Notes

Select this module when designing systems requiring a balance between low conduction loss and fast switching speeds. The hybrid structure offers lower switching losses than pure silicon modules while maintaining cost advantages over full SiC solutions. Verify that the system's cooling capacity can handle the thermal dissipation associated with the specified current ratings.

Part Context

This component belongs to onsemi's EliteSiC hybrid portfolio, specifically utilizing the Q2BOOST technology. It serves as an upgrade path for legacy silicon IGBT designs, offering improved efficiency in medium-power conversion stages. The part is distinct from the NXH200T120H3Q2F2SG variant primarily by its terminal configuration and specific manufacturing lot attributes.

Replacement Considerations

Direct replacements are limited due to the specific hybrid architecture and press-fit requirements. Evaluate the NXH200T120H3Q2F2SG if terminal compatibility allows. For non-hybrid alternatives, consider standard IGBT modules like the BSM200GA120DN2, though switching performance will differ significantly.