NXH350N100H4Q2F2PG

NXH350N100H4Q2F2PG

$100.76
  • Description:IC MODULE PIM 350A 1000V
  • Series:-

SKU:c21100ee0dbe Category: Brand:

  
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Product Detailed Parameters

  • Description:IC MODULE PIM 350A 1000V
  • Series:-
  • Mfr:onsemi
  • Package:Tray,Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Three Level Inverter
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 375A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:42-PIM/Q2PACK (93x47)
  • Voltage - Collector Emitter Breakdown (Max):1000 V
  • Current - Collector (Ic) (Max):303 A
  • Power - Max:592 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:24.146 nF @ 20 V

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NXH350N100H4Q2F2PG

Overview

The NXH350N100H4Q2F2PG is a three-level NPC Q2Pack module from onsemi, combining high-performance IGBTs with rugged anti-parallel diodes. It features Trench Field Stop technology for low switching loss and high power density. The outer IGBT (T1, T4) has a collector-emitter voltage of 1000 V, continuous current of 303 A at TC=80°C, and saturation voltage of 1.63 V at IC=375 A. The inner IGBT (T2, T3) offers 329 A continuous current and 1.27 V saturation voltage at IC=300 A. Inverse diodes support 133 A continuous forward current, while neutral point diodes handle 98 A. The module includes an NTC thermistor (22 kΩ at 25°C), operates up to TJ=150°C, and provides 4000 VRMS isolation.

Feature Summary

  • Extremely efficient Trench Field Stop technology reduces system power dissipation through low switching losses.
  • Integrated design combines high-performance IGBTs with rugged anti-parallel diodes for high power density.
  • Low inductive layout and low package height optimize thermal performance and PCB space utilization.
  • Built-in NTC thermistor enables precise junction temperature monitoring for enhanced system reliability.

Applications

  • Solar inverters
  • Uninterruptible power supply systems

Procurement Notes

Verify the ordering suffix PG indicates press-fit pins, distinct from the SG solder pin variant. Confirm RoHS compliance and Pb-free status via the manufacturer's latest documentation. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the semiconductor components.

Selection Notes

Select this module for applications requiring high current density and low conduction losses in three-level topologies. Verify that the gate drive circuitry supports the specified threshold voltages and total gate charge requirements. Ensure the cooling solution maintains the case temperature within limits to sustain the rated continuous collector currents without exceeding the maximum junction temperature specifications.

Part Context

This component belongs to the NXH350N100H4Q2F2 series, which utilizes the Q2PACK form factor. The PG suffix specifically denotes the press-fit pin configuration, whereas the SG suffix corresponds to solder pins. Both variants share identical electrical characteristics and are designed for high-density power conversion applications.

Replacement Considerations

Direct replacements include the NXH350N100H4Q2F2SG, which shares the same electrical specifications but utilizes solder pins instead of press-fit connections. Engineers must verify mechanical compatibility with the mounting interface when substituting between the PG and SG variants.

FAQ

What is the difference between the NXH350N100H4Q2F2PG and NXH350N100H4Q2F2SG?

The primary difference lies in the terminal configuration. The PG variant features press-fit pins, while the SG variant uses solder pins. All electrical parameters and thermal characteristics remain identical between the two versions.

Does the module include temperature sensing capabilities?

Yes, the module integrates an NTC thermistor with a nominal resistance of 22 kΩ at 25°C. This allows for accurate monitoring of the junction temperature to protect the device during operation.

What is the maximum operating junction temperature for the neutral point diodes?

While the IGBTs operate up to 150°C, the neutral point diodes (D5, D6) are qualified for a maximum operating junction temperature of 175°C, providing robust performance under high-stress conditions.

NXH350N100H4Q2F2PGNXH350N100H4Q2F2PG
$100.76
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