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Product Detailed Parameters
- Description：IGBT MODULE, CIB 1200 V, 35 A IG
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：-
- Configuration：Three Phase Inverter with Brake
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 35A
- Input：Three Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package：26-DIP
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：35 A
- Power - Max：20 mW
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：8.333 nF @ 20 V
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Overview
The NXH35C120L2C2ESG is a silicon IGBT module manufactured by onsemi, designed for three-phase inverter configurations. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 35 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a gate-emitter leakage current of 400 nA. Operating within a temperature range of -40°C to +150°C, it utilizes a TMPIM package with enhanced CIB technology.
Feature Summary
- Enhanced CIB technology implementation for optimized switching performance
- Three-phase inverter configuration supporting complex power conversion topologies
- High thermal stability enabling operation up to 150°C junction temperature
Applications
- Industrial motor drives requiring robust three-phase inversion
- Uninterruptible power supply systems utilizing high-voltage DC links
- Solar inverters demanding reliable silicon-based power conversion
Procurement Notes
This component has reached the end-of-life stage, indicating that onsemi will discontinue manufacturing. Verification of final purchase availability through authorized distributors is essential before integration into new designs. Engineers should assess remaining stock levels carefully to support ongoing production runs or maintenance requirements without relying on future replenishment.
Selection Notes
Designers must account for the discontinued status when selecting this module for long-term projects. The 1.2 kV rating and 35 A current capacity define its operational envelope. Thermal management solutions must accommodate the specified saturation voltage and operating temperature limits to ensure reliability throughout the remaining service life of the installed equipment.
Part Context
This module belongs to the NXH35C120L2C2E series from onsemi, representing their silicon IGBT portfolio. It serves as a specialized power semiconductor solution for medium-power applications. The specific suffix denotes packaging and terminal variations within the broader family of three-phase inverter modules offered by the manufacturer.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the end-of-life status, engineers should consult official obsolescence notices or contact onsemi directly for recommended alternative components that match the electrical specifications and form factor.
