NXH600B100H4Q2F2S1G

Overview

The NXH600B100H4Q2F2S1G is a silicon/silicon carbide hybrid three-channel flying capacitor boost module from onsemi. It integrates six 1000 V, 200 A IGBTs and six 1200 V, 60 A SiC diodes within a single Q2BOOST package (Case 180BK). The device includes an integrated NTC thermistor for thermal monitoring. Key electrical parameters include a collector-emitter saturation voltage of 1.88 V at 25°C and 2.4 V at 150°C. Thermal resistance from junction to case is specified at 0.225 K/W for the IGBT chips.

Feature Summary

• Utilizes trench field stop technology for high efficiency and low switching loss.
• Features a low inductive layout design to enhance system stability.
• Provides high power density through compact Q2 packaging.

Applications

• Solar inverters
• Uninterruptible Power Supplies Systems

Procurement Notes

Verify the specific ordering suffix 'S1G' against official documentation to confirm the exact configuration and pinout. Ensure that the Pb-free and halide-free solder pins meet the environmental requirements of the target assembly process. Cross-reference the marking diagram with the physical component to validate authenticity and traceability before integration into production lines.

Selection Notes

Select this module for applications requiring high-efficiency power conversion where reduced switching losses are critical. The inclusion of SiC diodes alongside IGBTs offers advantages in reverse recovery performance. Engineers must account for the specific thermal resistance values when designing heatsinking solutions to maintain junction temperatures within the safe operating area limits defined in the datasheet.

Part Context

This component belongs to the EliteSiC/C0116 series of Si/SiC hybrid modules. It is part of the Q2 family, designed for robust industrial and renewable energy applications. The module represents a consolidation of discrete components into a single optimized power stage, simplifying circuit board layout and reducing parasitic inductance compared to individual component assemblies.

Replacement Considerations

Direct replacement requires verifying pin compatibility and thermal interface dimensions. Alternative modules from the same Q2BOOST family may offer different current ratings or voltage classes but require careful evaluation of switching characteristics and gate drive requirements to ensure system stability without redesigning the control loop.

FAQ

What is the nominal resistance of the integrated NTC thermistor?

The nominal resistance of the NTC thermistor is 5 kΩ at 25°C.

Does the module contain internal gate resistors?

Yes, the module features an internal gate resistor with a typical value of 3 Ω.

What is the maximum positive transient gate-emitter voltage allowed?

The maximum positive transient gate-emitter voltage is 600 V for a pulse duration of 5 µs.