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The NXH600N105L7F5S1HG is a silicon IGBT power module manufactured by onsemi, designed for high-power energy storage systems. It utilizes the F5+BP-PIM package with an I-type Neutral Point Clamped (NPC) topology and High Power Switching DBC technology. Key electrical parameters include a maximum collector-emitter voltage of 1.05 kV, a saturation voltage of 2.3 V, and a gate-emitter leakage current of 1 uA. The module supports a power dissipation of 1.08 kW and operates within a temperature range of -40 C to +150 C. It features press-fit mounting in a PIM-57 case.
Verify the exact suffix against official documentation, as the provided data references NXH600N105L7F5S1HG while the query specifies NXH600N105L7F5SHG. Confirm RoHS compliance status and specific pin-out configurations directly from the manufacturer's datasheet before procurement to ensure compatibility with system requirements.
Select this module for applications requiring 1.05 kV blocking capability and high current handling in compact spaces. Ensure the design accommodates the specified 1.08 kW power dissipation and utilizes appropriate heatsinking for the -40 C to +150 C operating range. Verify that the PCB layout supports the press-fit installation method required for the PIM-57 package.
This component belongs to onsemi's EliteSiC and IGBT module portfolio, specifically targeting renewable energy and industrial power conversion. It represents a specialized solution for three-level inverters, offering higher power density compared to traditional two-level designs. The module is part of a broader family of F5BP packaged devices optimized for grid-tied and off-grid energy applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult onsemi's official cross-reference tools or contact technical support for validated alternatives that match the specific electrical and mechanical constraints of the F5BP package and NPC topology.