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The NXH600N65L4Q2F2PG is a silicon IGBT module from onsemi, configured as a quad three-phase inverter. It features a Q2PACK press-fit pin mounting style with a 41-PIM package footprint of 93x47 mm. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 483 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.61 V, a power dissipation rating of 931 W, and a gate-emitter leakage current of 15 uA. The operating temperature range spans from -40°C to +175°C, with a maximum gate-emitter voltage of 30 V.
Verify the specific suffix against official datasheets to confirm functional equivalence, as packaging or minor parameter variations may exist between similar part numbers. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability fluctuates. Ensure the receiving facility has appropriate handling procedures for press-fit modules to prevent mechanical damage during installation.
Select this component when a high-current, low-voltage (650V) quad IGBT solution is required for compact power conversion designs. The Q2PACK form factor offers a balance between current capacity and board space efficiency compared to larger discrete assemblies. Verify that the system's cooling infrastructure can manage the 931 W power dissipation rating under worst-case thermal conditions.
This module belongs to the NXH600 series, which utilizes trench field-stop technology for improved switching performance. It is part of onsemi's broader portfolio of power modules aimed at industrial and renewable energy markets. The Q2PACK family provides standardized footprints to simplify design-in processes across different voltage and current ratings within the same product line.
NXH600N65L4Q2F2SG is listed as a parameter-equivalent alternative.