NXH75M65L4Q1SG

NXH75M65L4Q1SG

$62.20
  • Description:Q1PACK 75A 650V
  • Series:-

SKU:4bd6c111419b Category: Brand:

  
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Product Detailed Parameters

  • Description:Q1PACK 75A 650V
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.22V @ 15V, 75A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:56-PIM (93x47)
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):59 A
  • Power - Max:86 W
  • Current - Collector Cutoff (Max):300 µA
  • Input Capacitance (Cies) @ Vce:5.665 nF @ 30 V

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NXH75M65L4Q1SG

Overview

The NXH75M65L4Q1SG is a silicon IGBT module from onsemi, belonging to the NXH75M65L4Q1 series. It features a full bridge configuration housed in a Q1PACK package with press-fit pins and TCP7000 technology. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a power dissipation rating of 385 W, and a gate-emitter leakage current of 400 nA. It operates within a temperature range of -40°C to +150°C.

Feature Summary

  • Integrated press-fit pin technology for secure mechanical mounting and reliable thermal performance
  • TCP7000 technology implementation for enhanced module reliability and robustness
  • Full bridge configuration providing a complete switching solution in a single compact package

Applications

  • Industrial motor drives requiring high reliability
  • Uninterruptible power supply (UPS) systems
  • Induction heating applications

Procurement Notes

Verify the specific suffix against official documentation to confirm pin configuration and terminal type. Ensure the procurement channel provides valid traceability records. Confirm that the received units match the exact part number designation to avoid compatibility issues with existing PCB layouts or cooling systems.

Selection Notes

Select this component when a full bridge topology is required with high current handling capabilities. The press-fit termination method eliminates soldering risks and improves vibration resistance compared to traditional wire bonds. Consider the thermal management requirements associated with the specified power dissipation rating during system design.

Part Context

This module is part of onsemi's NXH series, which utilizes advanced chip and module technologies for industrial power applications. The series is designed to offer improved efficiency and ruggedness. The specific model integrates multiple IGBTs and diodes into a single unit to simplify circuit design and reduce overall system footprint.

Replacement Considerations

Direct substitutes may include other models from the same NXH75M65L4Q1 series with different terminal options, such as NXH75M65L4Q1PTG. Verify pinout compatibility and thermal characteristics before substitution.

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