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The NXH75M65L4Q1SG is a silicon IGBT module from onsemi, belonging to the NXH75M65L4Q1 series. It features a full bridge configuration housed in a Q1PACK package with press-fit pins and TCP7000 technology. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a power dissipation rating of 385 W, and a gate-emitter leakage current of 400 nA. It operates within a temperature range of -40°C to +150°C.
Verify the specific suffix against official documentation to confirm pin configuration and terminal type. Ensure the procurement channel provides valid traceability records. Confirm that the received units match the exact part number designation to avoid compatibility issues with existing PCB layouts or cooling systems.
Select this component when a full bridge topology is required with high current handling capabilities. The press-fit termination method eliminates soldering risks and improves vibration resistance compared to traditional wire bonds. Consider the thermal management requirements associated with the specified power dissipation rating during system design.
This module is part of onsemi's NXH series, which utilizes advanced chip and module technologies for industrial power applications. The series is designed to offer improved efficiency and ruggedness. The specific model integrates multiple IGBTs and diodes into a single unit to simplify circuit design and reduce overall system footprint.
Direct substitutes may include other models from the same NXH75M65L4Q1 series with different terminal options, such as NXH75M65L4Q1PTG. Verify pinout compatibility and thermal characteristics before substitution.