NXH800A100L4Q2F2P2G

Overview

The NXH800A100L4Q2F2P2G is a three-level ANPC Q2Pack module from onsemi, featuring a negative press-fit pin configuration. It integrates high-performance trench field-stop IGBTs with rugged anti-parallel diodes in a triple configuration. The device supports a collector-emitter voltage of 1000 V and a continuous collector current of 309 A at TC = 80°C. Maximum power dissipation reaches 714 W at TJ = 175°C. Operating junction temperatures range from -40°C to +175°C, with an isolation test voltage of 4000 VRMS.

Feature Summary

• Extremely efficient trench field-stop technology reduces switching losses.
• Low inductive layout design enhances system performance.
• High power density with low package height.

Applications

• Solar inverters
• Uninterruptible power supply systems

Procurement Notes

Verify the specific ordering suffix P2G against official documentation to confirm the negative press-fit pin style and Case 180CQ package type. Ensure compatibility with existing thermal interface materials and mounting hardware requirements for press-fit installation.

Selection Notes

Select this module for applications requiring high-density integration and low switching losses. Consider the 1000 V rating and 309 A current capacity when designing thermal management solutions. Verify gate drive requirements align with the specified threshold voltages and total gate charge values.

Part Context

This component belongs to the NXH800A100L4Q2F2 series of three-level ANPC modules. It shares core electrical characteristics with variants like NXH800A100L4Q2F2S2G, differing primarily in the terminal configuration. The P2G suffix specifically denotes the negative press-fit pins.

Replacement Considerations

NXH800A100L4Q2F2S2G offers identical electrical performance but utilizes solder pins instead of press-fit terminals. Verify mechanical fit and assembly process compatibility before substitution.