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Product Detailed Parameters
- Description：PIM 1200V, 40A DUAL BOOST
- Series：*
- Mfr：onsemi
- Package：Bulk,Tray,Tray,Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The NXH80B120H2Q0SG is a silicon IGBT module from onsemi, configured as a half-bridge. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 40 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.05 V and a gate-emitter leakage current of 200 nA. Power dissipation is rated at 103 W. Operating temperatures range from -40°C to +150°C. The package type is Q0BOOST.
Feature Summary
- Dual boost configuration for high-performance power electronics
- Half-bridge topology with standard pinout
- Silicon-based IGBT technology
Applications
- Demanding power electronics applications
- Industrial motor drives
- Power supply systems
Procurement Notes
Verify the specific part number against official datasheets to ensure compatibility with circuit requirements. Confirm that the Q0BOOST package and electrical ratings match the design specifications. Check for any ordering suffixes that may indicate variations in function or performance. Ensure sourcing from authorized distributors to guarantee product authenticity and quality.
Selection Notes
Select this module for applications requiring a 1.2 kV blocking voltage and 40 A current handling capability. Consider the 103 W power dissipation rating for thermal management planning. Evaluate the -40°C to +150°C operating temperature range for environmental suitability. Compare with other half-bridge modules if different current or voltage ratings are needed.
Part Context
This component belongs to onsemi's IGBT module portfolio, specifically designed for robust power switching. It utilizes silicon technology and is packaged in the Q0BOOST format. The half-bridge configuration makes it suitable for various industrial and commercial power conversion tasks.
Replacement Considerations
NXH80T120L2Q0S2G
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 1.2 kV.
What is the continuous collector current rating?
The continuous collector current is 40 A at 25°C.
