NXH80B120H2Q0SNG

Overview

The NXH80B120H2Q0SNG is a dual boost power module integrating two 1200 V Field Stop II IGBTs with anti-parallel Silicon Carbide (SiC) diodes. It features a low inductive layout and includes an onboard NTC thermistor for thermal monitoring. The Boost IGBT has a saturation voltage of 2.2 V at 40 A, while the SiC Boost Diode exhibits a forward voltage of 1.4 V at 15 A. The module supports a continuous collector current of 41 A and a continuous forward current of 28 A. It offers bare copper or nickel-plated DBC options and utilizes Case 180AJ packaging with solderable pins.

Feature Summary

• Integrates high-performance FSII IGBTs with rugged anti-parallel SiC rectifiers for enhanced efficiency.
• Incorporates a low inductive layout design to minimize switching losses and electromagnetic interference.
• Includes an onboard NTC thermistor for precise junction temperature monitoring and protection.

Applications

• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Energy Storage Systems

Procurement Notes

Verify the specific ordering suffix 'N' indicates the Nickel-Plated DBC option as documented in the official datasheet. Confirm the package type matches Case 180AJ with solder pins. Ensure compatibility with the required thermal interface material specifications for the stated thermal resistance values. Validate that the assembly and test site codes align with project requirements before finalizing procurement orders.

Selection Notes

Select this module for applications requiring high-density power conversion with reduced switching losses due to the SiC diode integration. Consider the 1200 V rating for medium-voltage systems. Evaluate the thermal management needs based on the specified thermal resistance values and maximum junction temperature limits. Ensure gate drive voltages match the recommended ±15 V operating range for optimal performance and reliability.

Part Context

This component belongs to the NXH80B120H2Q0 family of dual boost power modules from onsemi. Variants within this family differ primarily by the Direct Bonded Copper (DBC) substrate plating option, such as bare copper versus nickel-plated finishes. The Q0BOOST designation refers to the specific case outline and pin configuration used for these integrated hybrid modules.

Replacement Considerations

NXH80B120H2Q0SG serves as a direct alternative with a Bare Copper DBC option instead of the Nickel-Plated version found in the SNG variant. Verify mechanical footprint compatibility and thermal interface requirements when substituting between these variants to ensure proper heat dissipation and mounting stability.

FAQ

What is the difference between the NXH80B120H2Q0SNG and NXH80B120H2Q0SG?

The primary difference is the Direct Bonded Copper (DBC) substrate finish. The SNG variant features a Nickel-Plated DBC, while the SG variant uses a Bare Copper DBC. Both share identical electrical characteristics and packaging dimensions.

Does the module include thermal protection components?

Yes, the module integrates an onboard NTC thermistor. The nominal resistance is 22 kΩ at 25°C, allowing for accurate monitoring of the junction temperature during operation.

What type of diodes are used in the boost configuration?

The module utilizes Silicon Carbide (SiC) Schottky barrier diodes as the anti-parallel rectifiers for the boost IGBTs, offering lower forward voltage and faster reverse recovery compared to standard silicon diodes.