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The NXH80T120L3Q0S3G is a silicon IGBT module manufactured by onsemi, designed for high-power applications. It features a half-bridge configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 82 W. Operating within a temperature range from -40°C to +175°C, it utilizes the Q0PACK housing with press-fit installation. The module incorporates trench field-stop technology and includes an integrated NTC thermistor for thermal monitoring.
Verify the specific suffix G against official datasheets to confirm RoHS compliance and lead time requirements. Confirm that the Q0PACK form factor matches the mechanical constraints of the target PCB or busbar interface. Ensure the press-fit termination method aligns with the assembly equipment capabilities available for production.
Select this component when a 1.2 kV rating and 75 A current capacity are required for half-bridge circuits. The 175°C maximum operating temperature allows for higher thermal margins compared to standard 150°C devices. Consider the 1.7 V saturation voltage for conduction loss calculations in efficiency-critical designs requiring robust thermal management solutions.
This part belongs to the NXH80T120L3Q0 series, representing third-generation PIM modules. It shares the Q0PACK footprint family with variants like NXH80T120L3Q0P3G, differing primarily in terminal style and specific electrical characteristics. The series targets high-reliability industrial and automotive traction applications.
NXH80T120L3Q0P3G offers identical electrical specifications but utilizes screw-mount terminals instead of press-fit pins. Verify mechanical compatibility before substitution. Other series members may share the Q0PACK outline but often differ in voltage ratings or current capacities.