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Product Detailed Parameters
- Description：DIODE ARRAY SIC 650V 30A TO247-3
- Series：-
- Mfr：WeEn Semiconductors
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io) (per Diode)：30A
- Voltage - Forward (Vf) (Max) @ If：1.95 V @ 15 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：250 µA @ 650 V
- Operating Temperature - Junction：175°C (Max)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NXPLQSC30650W6Q is a Silicon Carbide Schottky diode array manufactured by WeEn Semiconductors. It features a dual common cathode configuration housed in a TO-247 through-hole package. The device supports a maximum repetitive peak reverse voltage of 650 V and an average forward current rating of 30 A. Total gate charge is specified at 16 nC. This component is designed for high-frequency applications requiring low switching losses.
Feature Summary
- Dual common cathode configuration for efficient power conversion
- Silicon Carbide construction for high thermal stability
- Through-hole mounting for robust mechanical connection
Applications
- High-frequency switched-mode power supplies
- Industrial motor drives
- Uninterruptible power systems
Procurement Notes
Verify the specific ordering code against official manufacturer documentation to ensure compatibility with system requirements. Confirm that the end-of-life status does not impact long-term supply chain stability before finalizing procurement decisions. Cross-reference pinout details with the latest datasheet to prevent installation errors.
Selection Notes
Select this component when high-temperature operation and fast switching speeds are required. The TO-247 package provides adequate heat dissipation for moderate power levels. Ensure the circuit design accommodates the 650 V blocking capability and 30 A current handling without exceeding absolute maximum ratings.
Part Context
This part belongs to the silicon carbide diode array family from WeEn Semiconductors. It utilizes wide-bandgap technology to outperform traditional silicon devices in efficiency and thermal management. The dual common cathode design simplifies circuit topology for bridge rectifier or synchronous rectification applications.
Replacement Considerations
The manufacturer has scheduled this component for obsolescence. Verify availability of direct substitutes or alternative part numbers with matching electrical specifications and package dimensions before production discontinuation occurs.
