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The NXV08B800DT1 is an automotive power MOSFET module designed for high-current applications. It integrates four N-channel bare die MOSFETs in a back-to-back configuration within an APM17-MDC package. The device features a maximum drain-source voltage of 80 V and includes integrated NTC thermistors for temperature sensing. Electrical characteristics include a typical pure FET RDS(ON) of 0.46 mΩ at 25°C, with total gate charge of 502 nC. The module provides electrically isolated DBC substrates for low thermal resistance and supports direct mounting to heat sinks.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct assembly location and lot identification. Confirm that the required packing method aligns with production line handling capabilities. Ensure compliance with RoHS directives and lead-free soldering requirements during assembly processes.
Select this module for designs requiring compact integration of back-to-back MOSFETs with built-in thermal monitoring. Evaluate the thermal resistance specifications against the system's heat sink capabilities. Consider the gate charge and switching times when designing the driver circuitry for optimal efficiency.
This component belongs to onsemi's automotive power MOSFET module series, specifically utilizing the APM17-MDC package. It is part of a family of modules offering various voltage ratings and configurations for vehicle electrification applications.
Consult official substitution lists for compatible modules with similar voltage ratings and package dimensions. Verify pin compatibility and thermal performance before replacing existing designs.