NXV08H300DT1

NXV08H300DT1

$50.63
  • Description:MOSFET 4N-CH 80V APM17-MDC
  • Series:-

SKU:fdecb5c10f63 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 80V APM17-MDC
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):80V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V
  • Vgs(th) (Max) @ Id:4.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:502nC @ 12V
  • Input Capacitance (Ciss) (Max) @ Vds:30150pF @ 40V
  • Power - Max:-
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:17-PowerDIP Module (1.390", 35.30mm)
  • Supplier Device Package:APM17-MDC
  • Grade:Automotive
  • Qualification:AEC-Q101

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NXV08H300DT1

Overview

The NXV08H300DT1 is an automotive power MOSFET module from onsemi, packaged in the APM17-MDC format. It integrates four N-channel MOSFETs (Q1-Q4) with a maximum drain-to-source voltage of 80 V and a continuous drain current rating of 160 A. The device features two high-side and two low-side switches, offering typical RDS(ON) values of 0.65 mΩ for high-side and 0.46 mΩ for low-side devices at 25°C. It includes integrated NTC thermistors for temperature sensing and snubber components. Qualified to AQG324 standards, it supports 48 V traction and inverter applications.

Feature Summary

  • Two-phase MOSFET configuration allowing half-bridge usage by combining phase output terminals
  • Electrically isolated DBC substrate designed for low thermal resistance
  • Integrated NTC thermistors for direct temperature monitoring
  • Module-level AQG324 qualification with internal AEC Q101 and Q200 components

Applications

  • 48 V Inverter systems
  • 48 V Traction drives
  • Half-bridge motor control configurations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packing method and compliance status. Ensure the procurement channel provides valid traceability records as the module supports serialization. Confirm that the received units match the APM17-MDC package outline and marking diagram specifications before integration into the assembly process.

Selection Notes

Select this module for 48 V automotive traction or inverter designs requiring compact packaging and low thermal resistance. Evaluate the total module RDS(ON) paths for system efficiency calculations rather than individual switch values. Ensure the gate drive circuitry can supply the required 12 V logic levels and manage the total gate charge of 502 nC. Verify that the mounting torque remains within the recommended 0.7 N•m range to maintain mechanical integrity.

Part Context

This component belongs to the NXV series of automotive power modules, which utilize silicon MOSFET technology. The APM17-MDC package is optimized for high-power density applications in electric vehicles. The series emphasizes low inductance and simplified vehicle assembly through direct heat sink mounting capabilities.

Replacement Considerations

Consult the official onsemi product selector for alternative part numbers within the NXV series that match specific voltage or current requirements. Verify pin compatibility and thermal characteristics when considering cross-references.

NXV08H300DT1NXV08H300DT1
$50.63
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