NXV10V125DT1

NXV10V125DT1

$24.21
  • Description:MOSFET
  • Series:-

SKU:aa1702ad031c Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:6 N-Channel (Three Phase Inverter)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:2.2mOhm @ 80A, 12V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:101nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:6970pF @ 50V
  • Power - Max:-
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:21-PowerDIP Module (1.370", 34.80mm)
  • Supplier Device Package:APM21-CGA
  • Grade:Automotive
  • Qualification:AEC-Q101

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NXV10V125DT1

Overview

The NXV10V125DT1 is a three-phase automotive power MOSFET module manufactured by onsemi, designed for high-efficiency electric vehicle applications. It integrates six N-channel MOSFETs within an APM21-CGA package utilizing an electrically isolated DBC substrate to minimize thermal resistance. The device features a drain-source breakdown voltage of 100 V and a typical on-resistance of 3.96 mΩ. Key electrical parameters include a gate-source voltage limit of +20 V, a threshold voltage of 4.5 V, and a maximum operating temperature of +175°C. Switching characteristics specify a rise time of 26 ns, fall time of 15 ns, turn-on delay of 46 ns, and turn-off delay of 52 ns.

Feature Summary

  • Integrated three-phase configuration with electrically isolated DBC substrate for low thermal resistance
  • Built-in temperature sensing via NTC thermistor terminals for system monitoring
  • AQG324 qualified and PPAP capable for automotive supply chain compliance
  • Module serialization ensures full traceability throughout the manufacturing process

Applications

  • 48 V e-compressor systems
  • Other 48 V auxiliary power units
  • Automotive inverter modules requiring compact design

Procurement Notes

Verify component authenticity by cross-referencing the specific device code, lot ID, assembly location, year, work week, and serial number printed on the module casing against official onsemi documentation. Ensure the ordering suffix matches the required packing method and shipping quantity specifications provided in the manufacturer's data sheet to confirm correct variant selection.

Selection Notes

Select this module for designs prioritizing reduced total module resistance and simplified vehicle assembly through direct mounting via thermal interface material. The compact form factor supports efficient system design aimed at lowering fuel consumption and CO2 emissions. Confirm that the application environment requires AQG324 qualification and that the 100 V rating aligns with the target 48 V bus architecture.

Part Context

This component belongs to the NXV series of automotive power MOSFET modules from onsemi. It is part of the Discrete and Power Modules sub-category under Power MOSFETs. The device utilizes the APM21-CGA case modification and is shipped in tubes containing 44 units per box, adhering to standard automotive packaging protocols for high-reliability power electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing heat sink interfaces and control logic when considering alternative three-phase modules from other manufacturers.

NXV10V125DT1NXV10V125DT1
$24.21
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