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The NXV10V160ST1 is a three-phase automotive power MOSFET module manufactured by onsemi. It integrates six N-channel silicon carbide (SiC) MOSFETs within an APM21-CGA package, designed for high-efficiency power conversion in electric vehicles. The device features a drain-to-source breakdown voltage of 100 V and a maximum junction temperature rating of 175°C. Typical on-resistance values range from 1.34 mΩ to 2.20 mΩ per switch at 25°C. Key electrical parameters include a total gate charge of 101 nC, turn-on delay time of 46 ns, and fall time of 15 ns. The module incorporates an integrated NTC thermistor for thermal monitoring and utilizes an electrically isolated Direct Bonded Copper (DBC) substrate.
Verify the specific ordering suffix against official documentation to confirm assembly location, lot identification, and serial number formatting. Confirm RoHS compliance and UL94V-0 flammability ratings match project requirements. Ensure mounting torque specifications are adhered to during installation to prevent mechanical stress on the module.
Select this component for designs requiring compact, high-efficiency three-phase inversion in 48V automotive architectures. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Verify that system gate drive voltages align with the threshold characteristics and ensure adequate heat sink interface compatibility for direct mounting.
This module belongs to onsemi's Automotive Power MOSFET Module series, specifically utilizing SiC technology for enhanced performance. It is part of the NXV10V160ST1 product line, which targets reduced vehicle fuel consumption and CO2 emissions through efficient power electronics. The device replaces discrete solutions with a consolidated, serialized module design.
Consult official onsemi documentation for verified substitute part numbers. Cross-reference pin configurations and thermal characteristics when considering alternative modules.