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The OP528,005 is a silicon photoMOS relay manufactured by WeEn Semiconductors. It integrates an infrared LED driver and a dual N-channel MOSFET output in a single package. The device provides electrical isolation between the control circuit and the load. Key parameters include a maximum on-resistance of 15 ohms per channel and a contact configuration of Form A (SPST-NO). The component supports a continuous current rating of 100 mA and operates within a specified temperature range suitable for industrial applications.
Verify the specific ordering code suffix to ensure the correct tape and reel quantity matches the production requirements. Confirm that the component meets the necessary safety certifications for the target market. Check the latest datasheet for any updates regarding recommended soldering profiles to prevent thermal damage during assembly processes.
Select this component when dual isolated switches are required in a small footprint. Ensure the load voltage does not exceed the breakdown rating of the MOSFETs. Verify that the control circuit can provide sufficient current to activate the internal LED without exceeding power limits. Consider the on-resistance impact on signal integrity for low-voltage applications.
This part belongs to the family of solid-state relays utilizing photoMOS technology. It serves as an alternative to mechanical relays where size, speed, and lifespan are critical factors. The dual-channel design allows for efficient board space utilization compared to using two separate single-channel devices.
Check for direct pin-compatible alternatives from the same manufacturer or other vendors offering similar dual-channel photoMOS relays. Verify that substitute parts match the on-resistance, isolation voltage, and package dimensions to ensure seamless integration into existing designs.