PBR941,215

Overview

The PBR941 is a silicon NPN transistor designed for UHF wideband applications in the GHz range. It is housed in a surface-mount SOT23 package with gold metallization for reliability. Key electrical parameters include a transition frequency (fT) of 8 GHz at IC = 15 mA and VCE = 6 V, and a maximum unilateral power gain (GUM) of 15 dB at 1 GHz under the same conditions. The device exhibits a noise figure of 1.4 dB at 1 GHz with IC = 5 mA. Limiting values specify a collector-base voltage of 20 V, collector-emitter voltage of 10 V, and total power dissipation of 360 mW at a soldering point temperature of 60 °C.

Feature Summary

• Gold metallization ensures excellent reliability
• Low noise performance suitable for sensitive RF front ends
• High gain characteristics for efficient signal amplification
• Low distortion properties for accurate signal processing

Applications

• RF front end of analog cellular telephones
• RF front end of digital cellular telephones
• Cordless phones
• Radar detectors
• Satellite TV-tuners

Procurement Notes

Verify the component authenticity by checking the marking code 'V0' on the SOT23 package against the official datasheet specifications. Confirm that the supplier provides documentation tracing back to Philips Semiconductors or NXP, as the original data sheet was published in August 1998. Ensure the part meets the required thermal and electrical limits for your specific application environment.

Selection Notes

Select this transistor when designing circuits requiring high gain and low noise in the UHF to GHz frequency bands. Consider the SOT23 package constraints for thermal management, as power dissipation is limited to 360 mW at a soldering point temperature of 60 °C. Evaluate the biasing requirements, specifically the typical operating current of 15 mA for optimal gain and 5 mA for minimum noise figure, to match your system's power budget.

Part Context

The PBR941 is a discrete semiconductor component originally specified by Philips Semiconductors. It belongs to the category of UHF wideband transistors intended for RF applications. The device utilizes a silicon NPN structure within a compact surface-mount package, making it suitable for portable communication devices where size and performance are critical factors in the design.

Replacement Considerations

PBR941B_N is a documented similar part number from NXP Semiconductors. Verify pinout compatibility and electrical parameter equivalence before substitution. Other potential replacements may exist within the same manufacturer's portfolio, but direct cross-referencing requires consulting updated availability lists and detailed technical comparisons.

FAQ

What is the transition frequency of the PBR941?

The transition frequency (fT) is 8 GHz when measured at a collector current of 15 mA and a collector-emitter voltage of 6 V.

What is the maximum unilateral power gain at 1 GHz?

The maximum unilateral power gain (GUM) is typically 15 dB at 1 GHz, measured with a collector current of 15 mA and a collector-emitter voltage of 6 V at an ambient temperature of 25 °C.

What is the packaging type for the PBR941?

The PBR941 is available in a surface-mount 3-pin SOT23 plastic package.