PBSS302PD-QX

Single Bipolar Transistors Overview

The PBSS302PD-QX is a PNP low VCEsat transistor manufactured by Nexperia, housed in a SOT457 (SC-74) TSOP6 surface-mount package. It supports a continuous collector current of 4 A and a peak current of 15 A. The device features a maximum collector-emitter voltage of -40 V and a collector-base voltage of -40 V. Key electrical parameters include a typical collector-emitter saturation resistance of 55 mΩ at specific pulsed conditions and a transition frequency of 110 MHz. Total power dissipation reaches 2.5 W at 25 °C ambient temperature.

Single Bipolar Transistors Feature Summary

• Ultra low collector-emitter saturation voltage for high efficiency
• High continuous collector current capability up to 4 A
• Very low collector-emitter saturation resistance
• Reduced heat generation compared to conventional transistors

Single Bipolar Transistors Applications

• Power management functions
• Charging circuits
• DC-to-DC conversion
• MOSFET gate driving
• Power switches for motors and fans

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the non-automotive qualified PBSS302PD variant meets your design requirements, as automotive applications require specific -Q series parts. Ensure compatibility with standard reflow soldering profiles for the TSOP6 package.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling in a compact surface-mount footprint. The low saturation voltage minimizes power loss in switching applications. Consider thermal derating curves when designing PCB layouts, as power dissipation varies significantly based on copper pad area and substrate material. Verify base drive requirements to ensure adequate saturation under peak load conditions.

Single Bipolar Transistors Part Context

This part belongs to the PBSS series of low VCEsat transistors from Nexperia. It serves as the PNP complement to the NPN PBSS302ND. The series utilizes Breakthrough in Small Signal (BISS) technology to achieve superior performance in small packages. These devices are designed to replace larger discrete transistors while offering improved thermal and electrical characteristics.

Single Bipolar Transistors Replacement Considerations

The direct NPN complement is the PBSS302ND. For automotive-grade equivalents, consult the Nexperia PBSS302PD-Q or similar -Q series listings. Verify pinout compatibility and saturation voltage specifications when substituting with other manufacturers' PNP transistors in the SC-74 package.