PBSS304PD,115

Single Bipolar Transistors Overview

The PBSS304PD,115 is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia USA Inc. It is housed in a SOT457 (SC-74) plastic surface-mounted package. The device supports a collector-emitter voltage of -80 V and a continuous collector current of -3 A, with a peak current capability of -5 A. Key electrical parameters include a typical collector-emitter saturation resistance of 75 mΩ at -2 A collector current and -200 mA base current. The component features a transition frequency of 110 MHz and operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for high efficiency
• High collector current capability for power switching
• High collector current gain at elevated currents
• Reduced heat generation compared to conventional transistors

Single Bipolar Transistors Applications

• High-voltage DC-to-DC conversion
• High-voltage MOSFET gate driving
• High-voltage motor control
• High-voltage power switches such as motors and fans
• Thin Film Transistor backlight inverter
• Automotive applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to ensure correct packing method and tape configuration. Confirm that the requested quantity aligns with standard reel sizes or cut tape availability. Check the latest product status on the manufacturer website as specifications may be updated. Ensure compatibility with the required thermal management strategy based on the PCB footprint used during testing.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with low saturation voltage is required for high-efficiency switching. The SC-74 package offers a compact solution suitable for space-constrained designs. Consider the thermal resistance characteristics relative to the intended PCB copper area to ensure adequate heat dissipation under continuous load conditions.

Single Bipolar Transistors Part Context

This part belongs to the BISS transistor family from Nexperia, designed to replace conventional bipolar junction transistors in power management applications. It serves as the PNP complement to the NPN PBSS304ND model. The series is engineered to reduce printed-circuit board area requirements while maintaining robust performance in automotive and industrial environments.

Single Bipolar Transistors Replacement Considerations

The NPN counterpart is the PBSS304ND. Verify pinout compatibility if substituting with other PNP devices in the same package family.

Single Bipolar Transistors FAQ

What is the maximum peak collector current for the PBSS304PD?

The maximum peak collector current is -5 A for a single pulse duration of 1 ms or less.

How does the package design impact PCB area usage?

The SOT457 package requires a smaller printed-circuit board area than conventional transistors due to its compact surface-mount design.

What is the typical collector-emitter saturation voltage at full load?

At a collector current of -3 A and base current of -150 mA, the typical saturation voltage is -315 mV.