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Product Detailed Parameters
- Description：TRANS NPN/PNP 30V 5.7A/4.8A 8-SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：5.7A, 4.8A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：450mV @ 300mA, 6A / 510mV @ 250mA, 5A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2A, 2V / 150 @ 2A, 2V
- Power - Max：2.3W
- Frequency - Transition：140MHz, 115MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The PBSS4032SPN,115 is a Breakthrough In Small Signal (BISS) transistor containing an NPN and PNP pair in a SOT96-1 (SO8) package. The NPN transistor supports a collector-emitter voltage of 30 V and continuous current up to 5.7 A, with a peak current of 10 A. Its collector-emitter saturation resistance is typically 45 mΩ at 4 A. The PNP complement handles -30 V and -4.8 A continuous current, also peaking at -10 A, with a typical saturation resistance of 65 mΩ at -4 A. Total power dissipation reaches 2.3 W on ceramic PCBs.
Feature Summary
- Low collector-emitter saturation voltage for high efficiency
- Optimized switching time characteristics
- High collector current capability for both polarities
- High DC current gain maintained at elevated currents
Applications
- DC-to-DC conversion circuits
- Battery-driven devices
- Power management systems
- Charging circuits
Procurement Notes
Verify the component marking code '4032SPN' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the specified packing method requirements. Confirm that the ambient temperature conditions align with the thermal derating curves provided in the official documentation before finalizing orders.
Selection Notes
Select this component when space constraints require an integrated NPN/PNP pair in an SO8 package. It is suitable for applications demanding low saturation voltage to minimize heat generation. Verify that the required collector current does not exceed the 5.7 A limit for the NPN or 4.8 A for the PNP side under standard operating conditions.
Part Context
This device belongs to Nexperia's BISS transistor family, designed to replace conventional discrete transistors. It integrates two complementary transistors into a single medium-power SMD plastic package. This integration reduces the required printed-circuit board area compared to using separate components while maintaining robust electrical performance.
Replacement Considerations
The datasheet lists the PBSS4032SN as the NPN-only complement and the PBSS4032SP as the PNP-only complement. No other direct replacement part numbers are documented in the official specifications.
