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Product Detailed Parameters
- Description：TRANS NPN/PNP 30V 1A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：210 @ 500mA, 2V
- Power - Max：510mW
- Frequency - Transition：165MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The PBSS4130PANP,115 is a dual NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) plastic package with dimensions of 2 x 2 x 0.65 mm. The device supports a collector-emitter voltage (VCEO) of 30 V and a continuous collector current (IC) of 1 A per transistor, with a peak pulse current (ICM) of 2 A. Key electrical parameters include a maximum collector-emitter saturation resistance (RCEsat) of 190 mΩ for the NPN side and 250 mΩ for the PNP side at 1 A. The component is qualified to AEC-Q101 standards.
Feature Summary
- Very low collector-emitter saturation voltage for high efficiency
- High collector current capability with reduced PCB requirements
- AEC-Q101 qualified for automotive applications
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the DFN2020-6 footprint matches the design layout. Check for any recent product status changes or obsolescence notices on the Nexperia website before finalizing procurement plans.
Selection Notes
Select this component when a compact dual BJT solution with low saturation voltage is required. Ensure the application operates within the 30 V collector-emitter voltage limit and 1 A continuous current rating. Consider the thermal resistance characteristics based on the specific PCB copper layer thickness and pad size used in the design.
Part Context
This part belongs to the Nexperia BISS transistor family, designed for low power dissipation and high efficiency. It serves as an integrated complement pair, eliminating the need for separate NPN and PNP components. The DFN2020-6 package offers a space-saving alternative to traditional leaded packages while maintaining robust thermal performance.
Replacement Considerations
The datasheet identifies the NPN/NPN complement as PBSS4130PAN and the PNP/PNP complement as PBSS5130PAP. Verify pin compatibility and electrical parameters before substituting with other dual transistors from different manufacturers.
