PBSS4130QAZ

Single Bipolar Transistors Overview

The PBSS4130QA is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It operates with a collector-emitter voltage of 30 V and supports a continuous collector current of 1 A, with a peak pulse current capability of 1.5 A. The device utilizes a leadless ultra-small DFN1010D-3 (SOT1215) Surface-Mounted Device plastic package featuring visible and solderable side pads. Key electrical characteristics include a typical collector-emitter saturation resistance of 175 mΩ at 1 A collector current and 0.1 A base current.

Single Bipolar Transistors Feature Summary

• Very low collector-emitter saturation voltage for high energy efficiency
• High collector current capability in an ultra-small leadless package
• High DC current gain at elevated collector currents
• AEC-Q101 qualified for automotive applications

Single Bipolar Transistors Applications

• Loadswitch circuits
• Battery-driven devices
• Power management systems
• Charging circuits
• Power switches for motors and fans

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration, as standard data sheets may reference bulk or reel variants without explicit suffix details in the general description. Confirm that the DFN1010D-3 footprint matches your PCB design requirements, particularly regarding the exposed thermal pad and side-wettable flanks for reliable solder joint formation during assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when minimizing power loss and heat generation is critical due to its low saturation voltage. The small DFN1010D-3 package is suitable for space-constrained designs requiring high current density. Ensure the application environment aligns with the AEC-Q101 qualification if automotive reliability standards are required, and verify thermal dissipation capabilities based on the specific PCB copper area available for the collector pad.

Single Bipolar Transistors Part Context

This part belongs to the Nexperia BISS transistor family, which employs mesh-emitter technology to achieve superior performance compared to standard small-signal transistors. The PBSS4130QA serves as the NPN complement to the PBSS5130QA PNP transistor, allowing for complementary push-pull configurations in power switching applications where efficiency and compact size are prioritized.

Single Bipolar Transistors Replacement Considerations

The official PNP complement is the PBSS5130QA. For direct replacement in existing designs, ensure the substitute maintains the same DFN1010D-3 footprint and meets the 30 V / 1 A rating constraints. Verify that any alternative BISS transistor offers comparable saturation resistance and thermal characteristics to maintain circuit efficiency.