PBSS4140T,215

Single Bipolar Transistors Overview

The PBSS4140T is an NPN low VCEsat transistor manufactured by Nexperia, housed in a SOT23 plastic surface-mounted package. It supports a collector-emitter voltage of 40 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device features a typical collector-emitter saturation resistance of 260 mΩ under pulsed conditions (IC = 500 mA, IB = 50 mA). Thermal performance includes a junction-to-ambient thermal resistance of 417 K/W in free air and 278 K/W when mounted on an FR4 PCB with a 1 cm² collector pad. The transition frequency is specified at 150 MHz.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• High current capabilities supporting up to 1 A continuous operation
• Improved device reliability resulting from reduced heat generation

Single Bipolar Transistors Applications

• General purpose switching and muting
• LCD backlighting circuits
• Supply line switching applications
• Battery driven equipment such as mobile phones and video cameras

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration, as standard data sheets may not detail reel or tape specifications for every suffix variant. Confirm that the component version aligns with the latest product data sheet revision to ensure accurate limiting values and characteristics. Cross-reference the marking code ZT% with manufacturing site codes to validate authenticity and traceability before integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring compact NPN switching with minimized saturation losses. The SOT23 package suits space-constrained portable electronics. Ensure base drive currents meet the requirements for the desired saturation level, particularly at higher collector currents. Consider the thermal resistance values when designing PCB copper areas to maintain junction temperatures within the 150 °C limit during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the BISS (Bipolar Integrated Silicon Switch) family of low VCEsat transistors. The PNP complement is the PBSS5140T. The PBSS4140T utilizes advanced bipolar technology to achieve lower saturation voltages compared to standard small-signal transistors, making it suitable for battery-powered applications where efficiency and thermal management are critical design constraints.

Single Bipolar Transistors Replacement Considerations

The PBSS5140T serves as the PNP complement within the same series. Direct pin-compatible replacements should be verified against specific electrical parameters such as VCEsat and hFE, as generic NPN transistors may not offer the same low saturation characteristics.

Single Bipolar Transistors FAQ

What is the maximum peak collector current for single pulses?

The maximum peak collector current (ICM) is 2 A for single pulses with a duration of tp ≤ 1 ms.

How does the thermal resistance vary based on mounting?

The thermal resistance from junction to ambient (Rth(j-a)) is 417 K/W in free air and decreases to 278 K/W when mounted on an FR4 PCB with a 1 cm² collector mounting pad.

What is the marking code for this component?

The marking code is ZT%, where % represents a placeholder for the manufacturing site code.