PBSS5350Z,135

Single Bipolar Transistors Overview

The PBSS5350Z is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor housed in an SOT223 (SC-73) surface-mounted plastic package. It supports a collector-emitter voltage of -50 V and continuous collector current of -3 A, with peak current capability up to -5 A. The device features a typical collector-emitter saturation resistance of 120 mΩ at IC = -2 A and IB = -200 mA. Total power dissipation reaches 2 W on an FR4 PCB with a 6 cm² collector pad. Thermal resistance from junction to ambient is 92 K/W under these conditions.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for reduced conduction losses
• High collector current capability supporting both continuous and pulsed operation
• Maintains high DC current gain at elevated collector currents
• Enhanced energy efficiency resulting from minimized heat generation

Single Bipolar Transistors Applications

• DC/DC converters
• Supply line switching
• Battery charger circuits
• LED backlighting drivers
• Inductive load drivers such as relays and buzzers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging format before purchase. Confirm that the component version aligns with current production status rather than development or preliminary specifications. Ensure design compatibility with the SOT223 footprint dimensions provided in the datasheet. Check for any recent revision history updates that may affect pinning or thermal characteristics.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage is critical for system efficiency. The SOT223 package provides adequate thermal performance for medium power applications. Consider the NPN complement PBSS4350Z if complementary switching pairs are required. Evaluate thermal resistance requirements based on the specific PCB copper area available for the collector pad.

Single Bipolar Transistors Part Context

This device belongs to Nexperia's BISS transistor portfolio, designed for small signal applications requiring improved power handling. It serves as a PNP counterpart to the PBSS4350Z NPN transistor. The technology focuses on reducing saturation voltage while maintaining robust current capabilities in a standard surface-mount package suitable for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The official NPN complement is the PBSS4350Z. No other direct substitute part numbers are documented in the provided datasheet.