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Product Detailed Parameters
- Description：IGBT
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The PCFG25T120SMW is a single Field Stop (FS) Trench IGBT manufactured by onsemi, designed for high-efficiency power conversion. It features a 1200V collector-emitter voltage rating and a continuous collector current of 25A at 25°C. The device utilizes a TO-247-3L package with through-hole mounting. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.8V and a power dissipation capacity of 260W. It operates within a junction temperature range of -55°C to +175°C and incorporates an optimized anti-parallel diode.
Feature Summary
- Field Stop Trench technology for reduced switching losses
- Optimized integrated anti-parallel diode for low forward voltage
- Positive temperature coefficient for safe parallel operation
- High reliability with robust short-circuit withstand capability
Applications
- Solar inverter boost circuits
- Uninterruptible power supply (UPS) inverters
- Energy storage system converters
- EV charging power conversion stages
Procurement Notes
Verify the specific ordering suffix against the official datasheet to ensure correct packaging and electrical characteristics. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components. Ensure thermal management solutions align with the specified power dissipation limits.
Selection Notes
Select this component for applications requiring high switching frequencies and improved energy efficiency in 1200V systems. The FS7 platform offers lower conduction and switching losses compared to standard trench technologies. Consider the TO-247-3L package for ease of heatsinking and board layout. Evaluate system requirements for current handling and thermal resistance to ensure optimal performance under load conditions.
Part Context
This IGBT belongs to onsemi's FS7 switch platform, engineered for industrial and energy infrastructure markets. The series targets high-power density designs by minimizing magnetic component sizes through higher switching frequencies. The FS7 architecture balances low turn-off loss with robust latch-up immunity, supporting demanding automotive and renewable energy standards.
Replacement Considerations
Consult the official datasheet for direct pin-compatible substitutes within the same FS7 family. Verify that alternative parts match the 1200V rating and current specifications. Ensure thermal and electrical characteristics are equivalent to maintain system reliability and performance benchmarks.
