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The PCFG75T120SQF is a single Insulated Gate Bipolar Transistor (IGBT) die manufactured by onsemi. It utilizes Field Stop technology and is rated for a maximum collector-emitter breakdown voltage of 1200 V. The component is designed for surface mount wafer applications, providing robust performance in high-power switching environments.
Verify the specific wafer lot and die specifications against the official datasheet before integration. Confirm that the surface mount wafer form factor aligns with the target assembly process. Ensure compatibility with the intended thermal management solution for the bare die application.
Select this component when a bare die IGBT solution is required for custom packaging or advanced thermal designs. The 1200 V rating suits high-voltage applications. Evaluate the Field Stop technology benefits for efficiency needs compared to standard trench designs.
This part belongs to the single IGBT category from onsemi. It represents a discrete semiconductor device utilizing Field Stop architecture. The wafer format distinguishes it from packaged modules, offering flexibility for specialized manufacturing processes.
PCFG75T120SQF/D is a documented variant within the same product family.