PCFG75T65SQF

Description：IGBT FIELD STOP 650V WAFER
Series：-

SKU:9b6c14bfb2eb Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT FIELD STOP 650V WAFER
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：128 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Wafer
Grade：-
Qualification：-

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PCFG75T65SQF

Overview

The PCFG75T65SQF is a field stop 4th generation IGBT die from onsemi, designed for solar inverter and UPS applications. It features a collector-emitter voltage (VCES) of 650 V and a pulsed collector current (ICM) of 300 A. The typical saturation voltage (VCE(sat)) is 1.6 V at IC = 75 A and VGE = 15 V. Operating junction temperature ranges from -40°C to +175°C. Gate-emitter voltage limits are ±20 V. Total gate charge (Qg) is 128 nC under standard test conditions.

Feature Summary

Utilizes novel field stop IGBT technology for optimized performance
Positive temperature coefficient facilitates easy parallel operation
High input impedance combined with fast switching capabilities

Applications

Solar inverters
UPS systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm shipping method and packaging details. Confirm that the component meets all required automotive or industrial standards before integration into final designs. Ensure thermal management aligns with assembly properties as specified in the datasheet maximum ratings.

Selection Notes

Select this die when low conduction and switching losses are critical for system efficiency. Consider the 175°C maximum junction temperature for high-temperature environments. Validate electrical characteristics against specific package design and mounting technology requirements, as switching properties depend heavily on the final module assembly.

Part Context

This bare die is part of onsemi's Field Stop 4th Generation IGBT series. It serves as the core semiconductor element intended for integration into discrete packages like the AFGHL75T65SQD. The die provides extended electrical characteristics referenced by the corresponding packaged device datasheets.

Replacement Considerations

Refer to the AFGHL75T65SQD datasheet for extended electrical characteristics and switching properties. Verify compatibility with existing module designs if replacing a packaged unit with this bare die.