PCGA160T65NF8

Description：IGBT TRENCH FS 650V 160A WAFER
Series：-

SKU:9df5bb02ac84 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 160A WAFER
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：160 A
Current - Collector Pulsed (Icm)：480 A
Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 160A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：167 nC
Td (on/off) @ 25°C：53ns/98ns
Test Condition：400V, 160A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Wafer
Grade：Automotive
Qualification：AEC-Q101

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PCGA160T65NF8

Overview

The PCGA160T65NF8 is a bare die Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Field Stop Trench Gen3 (FS3) technology and operates with a voltage rating of 650V and a current capacity of 160A. The component features a die size of 10mm x 7mm. It is designed for integration into power modules using aluminum wirebonding techniques.

Feature Summary

Field Stop Trench Gen3 architecture
Bare die configuration
Aluminum wirebonding compatibility

Applications

Power module construction
Industrial inverter systems
Motor drive applications

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation to confirm electrical characteristics and mechanical dimensions. Ensure that the bare die form factor aligns with your assembly capabilities, as this component requires custom packaging and wirebonding processes rather than standard discrete handling.

Selection Notes

Select this component when designing high-power density modules requiring robust switching performance. Consider the 10mm x 7mm die size for thermal management and the FS3 technology for efficiency. Confirm that your manufacturing process supports aluminum wirebonding for interconnection within the final power module assembly.

Part Context

This IGBT belongs to the Field Stop Trench Gen3 family, representing an evolution in power semiconductor design. It is offered as a bare die, distinguishing it from packaged discrete components. This format allows system integrators to optimize module layouts and thermal paths directly.

Replacement Considerations

Consult official onsemi documentation for direct cross-reference part numbers. Verify compatibility regarding die dimensions, electrical ratings, and bonding requirements before substituting any alternative components.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.