PCGA300T65DF8M1

Description：IGBT TRENCH FS 650V 300A WAFER
Series：-

SKU:2cdf8628dd9b Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 300A WAFER
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：300 A
Current - Collector Pulsed (Icm)：900 A
Vce(on) (Max) @ Vge, Ic：1.55V @ 15V, 100A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：307 nC
Td (on/off) @ 25°C：167ns/298ns
Test Condition：300V, 300A, 15Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Wafer
Grade：Automotive
Qualification：AEC-Q101

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PCGA300T65DF8M1

Overview

The PCGA300T65DF8M1 is a bare die Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes the Field Stop Trench Gen3 (FS3) technology and features a rated voltage of 650V with a current capacity of 300A. The component has a square die size of 12mm x 12mm. Its emitter pads are equipped with Ni/Ag top metal, enabling both solderable and sinterable attachment methods for module integration.

Feature Summary

Field Stop Trench Gen3 (FS3) IGBT technology
Ni/Ag solderable/sinterable top metal on emitter pads

Applications

Power module manufacturing
Industrial power conversion systems
High-power inverter applications

Procurement Notes

This item is a semiconductor bare die intended for direct integration into power modules. Procurement requires verification of specific handling protocols for fragile silicon components. Buyers must confirm compatibility with their assembly processes, particularly regarding the Ni/Ag pad finish for either soldering or sintering techniques. Ensure that supply chain documentation matches the exact part number to avoid substitution errors.

Selection Notes

Select this component when designing high-voltage power modules requiring robust switching performance. The FS3 technology offers optimized conduction and switching characteristics. The choice between soldering and sintering depends on the thermal management strategy and reliability requirements of the final application. Verify that the 12mm x 12mm die dimensions fit within the target module footprint and that the 650V rating aligns with the system's voltage stress levels.

Part Context

PCGA300T65DF8M1 belongs to onsemi's discrete semiconductor product line, specifically categorized under transistors and IGBTs. It represents a wafer-level component designed for internal use by module manufacturers rather than end-users. This part is distinct from packaged devices, serving as a fundamental building block for constructing custom power electronic assemblies.