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Product Detailed Parameters
- Description：IGBT TRENCH FS 750V 200A WAFER
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：750 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 200A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：718 nC
- Td (on/off) @ 25°C：257ns/247.5ns
- Test Condition：400V, 200A, 2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Wafer
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
PCGLA200T75NF8 is a Field Stop 4 (FS4) Trench IGBT bare die manufactured by onsemi. It features a collector-emitter voltage rating of 750 V and a continuous collector current capacity of 200 A. The component utilizes a square die footprint measuring 10 mm by 10 mm. As a bare die, it is designed for integration into custom power modules rather than standalone discrete packages.
Feature Summary
- Field Stop 4 (FS4) Trench IGBT technology
- 750 V blocking voltage capability
- 200 A continuous current handling
- 10 mm x 10 mm die size
Applications
- EV/HEV Traction Modules
- General industrial power applications
Procurement Notes
Verify the specific datasheet revision and electrical characteristics directly with onsemi or authorized distributors before design finalization. Confirm that the bare die form factor aligns with your module assembly capabilities, as this component lacks an external package. Ensure thermal management solutions are compatible with the specified 10 mm x 10 mm die dimensions for effective heat dissipation in your target application.
Selection Notes
Select PCGLA200T75NF8 when designing high-power traction or industrial modules requiring FS4 technology benefits. Consider its 750 V rating and 200 A current capacity against your system's voltage and load requirements. Evaluate the bare die format against packaged alternatives to determine if custom module assembly fits your manufacturing infrastructure and cost structure.
Part Context
This component belongs to onsemi's FS4 Trench IGBT family, representing advanced silicon switching technology. It serves as a fundamental building block for high-efficiency power conversion systems. The bare die configuration allows manufacturers to optimize module layouts for specific thermal and electrical performance targets in demanding environments.
Replacement Considerations
Consult official onsemi documentation for direct pin-compatible or functionally equivalent bare die replacements within the FS4 or newer generations. Verify voltage and current ratings match or exceed the original specifications. Cross-reference die dimensions to ensure compatibility with existing module substrates and bonding processes.
