ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT STEALTH DUAL 600V 30A
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The PCISL9R1560W is a Stealth Dual IGBT module manufactured by onsemi. It integrates a 600V N-channel Insulated Gate Bipolar Transistor with a complementary fast recovery anti-parallel diode in a single package. The device supports a continuous collector current of 30A and features low switching losses optimized for high-frequency operation. Designed for robust industrial performance, it operates within a junction temperature range of -40°C to +175°C, ensuring reliability in demanding power conversion environments.
Feature Summary
- Stealth Fast Recovery technology minimizes reverse recovery charge for reduced switching losses
- Integrated anti-parallel diode provides efficient freewheeling capability
- High thermal conductivity design facilitates effective heat dissipation
- Optimized for high-frequency applications to improve system efficiency
Applications
- Motor drive inverters
- Switched-mode power supplies (SMPS)
- Industrial motor control systems
Procurement Notes
Verify the specific suffix 'W' against the official datasheet to confirm pinout configuration and mechanical dimensions. Ensure the ordering part number matches the exact Stealth Dual specification required for your circuit design. Cross-reference the manufacturer's latest documentation to validate compliance with RoHS standards and material declarations before finalizing procurement orders.
Selection Notes
Select this component when a compact solution combining an IGBT and a fast recovery diode is required for 600V applications. Evaluate the thermal resistance characteristics against your heatsinking strategy to maintain junction temperatures within safe limits. Consider the switching speed benefits of the Stealth technology if minimizing electromagnetic interference and conduction losses are primary design objectives.
Part Context
This component belongs to onsemi's Stealth Dual IGBT family, which combines advanced silicon technologies for superior performance. The Stealth series is engineered to address the challenges of high-efficiency power conversion by reducing switching energy. This specific model represents a discrete solution suitable for designs requiring integrated rectification without external diode components.
Replacement Considerations
Consult the official onsemi replacement guide or cross-reference tools for verified substitute part numbers. Do not assume functional compatibility based solely on voltage and current ratings; verify pinout alignment and thermal characteristics. Refer to manufacturer documentation for approved alternatives that match the specific Stealth technology requirements.
