PD20015C

Overview

The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor from the LdmoST family. It operates at 13.6 V in common source mode at frequencies up to 2 GHz. The device delivers 15 W output power with 11 dB gain at 2 GHz. Key electrical parameters include a drain-source voltage of 40 V and a maximum operating junction temperature of 200 °C. Static characteristics specify a gate-source threshold voltage of 4.2 V typical. Dynamic performance includes a P3dB of 23 W and an efficiency of 53% at 2 GHz.

Feature Summary

• Designed for high gain and broadband commercial and industrial applications
• Features excellent thermal stability and superior linearity performance
• Incorporates ESD protection within the package
• Utilizes BeO-free packaging compliant with European directives

Applications

• Mobile communication equipment
• Broadband commercial transmitters
• Industrial RF applications

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official documentation. Confirm the specific revision history matches the required design specifications. Ensure the M243 package dimensions align with the target PCB footprint. Validate that the ECOPACK grade meets environmental compliance standards for the intended deployment region.

Selection Notes

Select this component for designs requiring operation near 2 GHz with moderate power output. Verify that the bias circuitry supports the 13.6 V supply and 350 mA quiescent current requirements. Ensure the thermal management solution can handle the specified junction-to-case thermal resistance. Confirm that the load mismatch tolerance meets the system's VSWR constraints.

Part Context

This part belongs to STMicroelectronics' LdmoST plastic family of lateral MOSFETs. It shares architectural similarities with other devices in the series but is optimized for higher frequency operation up to 2 GHz compared to lower-frequency variants. The technology leverages advanced LDMOS processes to achieve high reliability and linearity in a compact surface-mount package.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Engineers should evaluate other LdmoST family members or comparable RF power transistors based on matching voltage ratings, gain profiles, and package compatibility.