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The PD54008S-E is an N-channel enhancement-mode lateral MOSFET RF power transistor manufactured by STMicroelectronics. It utilizes silicon LDMOS technology and operates at frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage of 40 V, a continuous drain current of 4 A, and a maximum gate-source voltage of +20 V. The device delivers an output power of 8 W with a gain of 17 dB. It features a power dissipation rating of 52.8 W and operates within a temperature range of -65°C to +150°C. The component is housed in a PowerSO-10 surface-mount package.
Verify the specific suffix against official datasheets to confirm pinout and packaging variations. Ensure compatibility with JEDEC standards for the PowerSO-10RF form factor. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component when an 8 W output power at 1 GHz is required with moderate gain. Compare against the PD54008-E series for similar performance in different packaging options. Consider the 40 V breakdown voltage for supply headroom. Evaluate thermal management requirements given the 52.8 W dissipation rating in the PowerSO-10 package.
This device belongs to the PD54008-E family of RF power transistors. It shares core LDMOS architecture with variants like the PD54008TR-E and PD54008L-E. Differences primarily involve packaging formats such as PowerSO-10RF versus PowerFLAT. All variants target similar broadband RF amplification markets.
The PD54008-E is a related variant within the same product family. Verify pinout compatibility before substitution. The PD54008TR-E offers identical electrical performance but uses a reel package instead of tube.