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The PD55003 is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST plastic family. It operates in common source mode at frequencies up to 1 GHz with a drain-source voltage of 40 V and gate-source voltage of ±20 V. The device delivers 3 W output power with 17 dB gain at 500 MHz under 12.5 V supply and 50 mA bias current. It features a PowerSO-10RF package with formed leads, offering excellent thermal stability and linearity for broadband commercial and industrial applications.
Verify the specific ordering suffix against the datasheet to confirm lead type. The standard PD55003 designation corresponds to the PowerSO-10RF package with formed (gull-wing) leads. Ensure compatibility with assembly requirements before procurement.
Select based on required output power and frequency range within the 1 GHz limit. Consider the PowerSO-10RF package dimensions for PCB layout. Verify thermal management capabilities given the junction-to-case thermal resistance of 3.0 °C/W for reliable operation at maximum ratings.
This component belongs to the LdmoST Plastic Family of N-channel enhancement-mode lateral MOSFETs manufactured by STMicroelectronics. It utilizes advanced LDMOS technology optimized for RF power applications, providing a balance of high gain, reliability, and ease of assembly in a surface-mount format.
PD55003S is the alternative variant featuring straight leads instead of formed leads within the same PowerSO-10RF package family. Both share identical electrical specifications and functionality.