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The PD55003TR-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high-gain, broadband commercial and industrial applications. It operates at 12 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage of 40 V, continuous drain current of 2.5 A, and output power of 3 W. At 500 MHz and 12.5 V, it delivers 17 dB gain. The device functions within a temperature range of -65 °C to +150 °C and utilizes the PowerSO-10RF-Formed-4 package.
Verify the specific suffix 'TR-E' against official STMicroelectronics documentation to confirm tape and reel packaging and compliance status. Ensure the component matches the PowerSO-10RF-Formed-4 footprint requirements. Cross-reference datasheet revisions to confirm pinout consistency before finalizing procurement orders.
Select this component for designs requiring 3 W output power at 500 MHz with 17 dB gain. Verify that the 40 V drain-source voltage rating aligns with the circuit's supply rails. Confirm that the 2.5 A continuous current capability meets the load requirements. Ensure the operating frequency does not exceed the 1 GHz limit specified for the device.
This part belongs to the PD55003-E series of RF power transistors. It shares core specifications with the PD55003L-E but differs in package type. The TR-E suffix indicates reel packaging, distinct from tube or cut tape variants. It represents STMicroelectronics' integration of LDMOS technology into standard surface-mount plastic packages.
PD55003-E serves as the base model variant. PD55003L-E offers identical electrical performance in a PowerFLAT 5x5 HV leadless package. Substitution requires verifying package footprint compatibility and ensuring thermal management solutions match the alternative form factor.