PD55008-E

Overview

The PD55008-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high-gain, broadband commercial and industrial RF applications. Operating in common source mode at 12 V, it delivers 8 W output power with 17 dB gain at 500 MHz. The device supports frequencies up to 1 GHz and features a PowerSO-10RF package with formed leads. Key electrical parameters include a maximum drain-source voltage of 40 V, continuous drain current of 4 A, and power dissipation of 52.8 W. It operates within a temperature range of -65 °C to +150 °C.

Feature Summary

• Excellent thermal stability and linearity performance suitable for car mobile radio applications
• First true SMD plastic RF power package (PowerSO-10RF) optimized for RF needs and ease of assembly
• High reliability construction using ST’s latest LDMOS technology

Applications

• Car mobile radio systems
• Broadband commercial RF amplifiers
• Industrial RF power applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging type, as variants exist for tubes and reels. Ensure the component meets RoHS3 compliance requirements for your region. Check moisture sensitivity level (MSL 3) handling instructions during storage and assembly to prevent damage. Confirm that the PowerSO-10RF package dimensions match your PCB footprint design guidelines.

Selection Notes

Select this component when an 8 W output power at 500 MHz with 17 dB gain is required in a surface-mount plastic package. Consider the 40 V drain-source voltage rating for system headroom. Evaluate the 52.8 W power dissipation capability against your thermal management solution. Verify compatibility with 12 V common source operation for your specific frequency band up to 1 GHz.

Part Context

The PD55008-E belongs to STMicroelectronics' LdmoST plastic family of lateral MOSFETs. It represents an evolution in RF power components by integrating high-performance LDMOS technology into a JEDEC-approved surface-mount package. This series addresses the need for reliable, high-gain transistors in compact form factors for modern communication equipment.

Replacement Considerations

The PD54008-E is a related variant offering similar 8 W output but operates at 7 V with 11.5 dB gain. Verify voltage compatibility and gain requirements before substitution. No other direct cross-model substitutes are confirmed in public documentation.