PD55008S-E

Overview

The PD55008S-E is an N-channel enhancement-mode lateral RF power MOSFET manufactured by STMicroelectronics. It operates at frequencies up to 1 GHz with a drain-source breakdown voltage of 40 V and a continuous drain current of 4 A. The device delivers 8 W output power with 17 dB gain at 500 MHz under 12.5 V bias. It utilizes the PowerSO-10RF package for surface mount applications, supporting a maximum operating temperature of +150 °C and a minimum of -65 °C.

Feature Summary

• Common source configuration optimized for high gain and broad band commercial applications
• Enhanced thermal stability utilizing LDMOS technology
• JEDEC approved high power SMD plastic package design

Applications

• Broadband commercial RF amplification
• Industrial RF signal processing
• Car mobile radio systems

Procurement Notes

Verify the specific suffix 'S' against the official datasheet to confirm package orientation or lead form variations. Ensure compatibility with JEDEC standards for the PowerSO-10RF footprint. Cross-reference RoHS compliance status directly with the manufacturer's latest documentation before integration.

Selection Notes

Select this component for designs requiring 8 W output at 500 MHz with 17 dB gain. Verify that the 40 V drain-source voltage rating meets circuit requirements. Confirm that the 4 A continuous current capability aligns with thermal management strategies for the PowerSO-10RF package.

Part Context

This part belongs to the PD55008 series of lateral MOSFETs from STMicroelectronics. It shares core electrical characteristics with variants like the PD55008-E but differs in packaging specifics indicated by the suffix. The series targets high reliability RF applications using advanced LDMOS processes.

Replacement Considerations

The PD55008-E is a direct functional equivalent within the same family. Verify if the PowerSO-10RF lead form matches the system board layout requirements when substituting between these specific suffixes.