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The PD55015STR-E is an N-channel enhancement-mode lateral RF power transistor from the LdmoST family. It operates at frequencies up to 1 GHz with a drain-source breakdown voltage of 40 V and continuous drain current of 5 A. The device delivers 15 W output power with 14 dB gain at 500 MHz under 12.5 V bias. It features a PowerSO-10RF-Straight-4 surface-mount package, rated for junction temperatures up to +150°C and power dissipation of 73 W.
Verify the specific suffix 'STR-E' against official STMicroelectronics documentation to confirm reel packaging and RoHS compliance status. Ensure the ordering part number matches the exact datasheet revision required for your design specifications before finalizing procurement.
Select this component for designs requiring 15 W output power in a compact surface-mount form factor. Verify that the 40 V drain-source voltage rating aligns with the circuit's maximum operating conditions. Confirm compatibility with the PowerSO-10RF footprint and thermal management requirements specified in application note AN1294.
This part belongs to the PD55015-E series within the LdmoST plastic family. It shares core electrical characteristics with the tube-packaged PD55015-E but differs in shipping format. The STR-E designation indicates a tape-and-reel configuration suitable for automated surface-mount assembly processes.
PD55015-E (Tube) offers identical electrical performance in a different package format. PD55025-E provides higher output power (25 W) with similar gain and frequency range. PD55003-E offers lower output power (3 W) with higher gain.