PD55025S-E

Overview

The PD55025S-E is an RF power MOSFET transistor manufactured by STMicroelectronics. It is a silicon N-channel device designed for high-frequency applications up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 5 A, and a gate-source voltage (Vgs) rating of +20 V. The component delivers an output power of 25 W with a gain of 13 dB at the specified operating frequency. It features a minimum forward transconductance of 2.5 S and a power dissipation capability of 73 W. The device operates within a temperature range of -65 °C to +150 °C and is housed in a PowerSO-10RF-Straight-4 surface-mount package.

Feature Summary

• High-power RF performance optimized for operation up to 1 GHz
• Robust thermal management with high power dissipation capacity
• Designed for broadband communication and ISM band applications

Applications

• Broadband communication systems
• ISM band applications
• RF power amplification circuits

Procurement Notes

Verify the specific ordering suffix and tape/reel or tube packaging configuration directly with the manufacturer or authorized distributors before procurement. Confirm that the component meets RoHS compliance requirements and check for any recent production change notices that may affect pinout or electrical characteristics. Ensure the supply chain source is authorized to guarantee authenticity and traceability of the silicon die.

Selection Notes

Select this component when designing RF power stages requiring 25 W output at frequencies up to 1 GHz. Ensure the circuit design supports the 40 V drain-source voltage limit and provides adequate heat sinking for the 73 W dissipation rating. Verify that the gate drive voltage remains within the +20 V maximum limit and that the load impedance matches the device's optimal operating conditions for the specified 13 dB gain.

Part Context

This part belongs to the PD55025-E series of RF power MOSFETs from STMicroelectronics. The series utilizes advanced LDMOS technology targeted for operation up to 2.0 GHz. Other members in this family include variants with different power ratings such as the PD55015S-E and PD55003S-E, which share similar packaging and interface characteristics but differ in output power and current capabilities.

Replacement Considerations

Direct replacements within the same series include the PD55015S-E and PD55003S-E, though these offer lower output power ratings. Cross-family substitution requires careful verification of pin compatibility, thermal resistance, and RF performance curves against the original design specifications.