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The PD55025STR-E is an N-channel enhancement-mode lateral MOSFET RF power transistor manufactured by STMicroelectronics. It operates at a drain-source voltage of 12.5 V and delivers 25 W of output power with 14.5 dB gain at 500 MHz. The device supports frequencies up to 1 GHz and features a continuous drain current of 7 A. It utilizes the PowerSO-10RF-2 surface-mount package, rated for operation between -65°C and +165°C, with a maximum power dissipation of 73 W and a gate-source voltage limit of +40 V.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout and electrical characteristics. Ensure compliance with humidity sensitivity handling requirements during storage and assembly processes. Cross-reference the datasheet revision date to validate parameter accuracy before integration into final designs.
Select this component when a 25 W output power capability at 12.5 V is required for broadband operations. The PowerSO-10RF-2 package is suitable for designs prioritizing surface-mount assembly ease and thermal stability. Consider the 1 GHz frequency range and 14.5 dB gain specifications for matching network design purposes.
This part belongs to the PD55025-E series of RF power transistors. It represents STMicroelectronics' LdmoST plastic family, which integrates lateral MOSFET technology into standard surface-mount packages. This series targets applications requiring robust RF performance without the complexity of ceramic packaging solutions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers or different power ratings within the same package type.