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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V POWERSO10
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Technology：LDMOS
- Frequency：960MHz
- Gain：15dB
- Voltage - Test：28 V
- Current Rating (Amps)：250mA
- Noise Figure：-
- Current - Test：10 mA
- Power - Output：2W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PowerSO-10 Exposed Bottom Pad
- Supplier Device Package：10-PowerSO
- Configuration：-
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Overview
The PD57002-E is an N-channel RF MOSFET transistor manufactured by STMicroelectronics. It operates at a frequency of 1 GHz with a gain of 15 dB and delivers 2 W output power. The device features a Vds breakdown voltage of 65 V, continuous drain current of 250 mA, and gate-source voltage of +20 V. Power dissipation is rated at 4.75 W. It functions within a temperature range of -65 C to +150 C. The component utilizes Silicon technology and is housed in a PowerSO-10RF-Formed-4 SMD/SMT package.
Feature Summary
- N-channel enhancement-mode lateral MOSFET construction
- Excellent thermal stability characteristics
- Designed for high-frequency RF applications
Applications
- IFF (Identification Friend or Foe) interrogator systems operating at 1030 MHz
- RF power amplifier stages
- Military radar pulse amplification
Procurement Notes
Verify the EOL status before design finalization as the component is marked as End-of-Life. Confirm availability through authorized distributors as stock may be limited. Ensure compliance with RoHS directives if required for the specific application environment. Check for moisture sensitivity levels during storage and handling procedures.
Selection Notes
Select this component for designs requiring 2 W output at 1 GHz with 65 V drain-source voltage. Consider the PowerSO-10RF-Formed-4 package for surface mount integration. Evaluate thermal management requirements given the 4.75 W power dissipation rating and operating temperature limits up to 150 C.
Part Context
This part belongs to the PD57002 series of RF power transistors. It is often utilized in reference designs such as STEVAL-TDR007V1, where it is combined with other devices like PD57018-E and PD57060-E to achieve higher power outputs in IFF mode applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, alternative sourcing requires verification of functional equivalence with similar RF MOSFETs from STMicroelectronics or other manufacturers.
