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The PD57002 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial applications up to 1 GHz. It operates in a common source configuration at 28 V, delivering 2 W output power with 15 dB gain at 960 MHz. The device features excellent thermal stability and high linearity, making it suitable for digital cellular base station applications. It utilizes the PowerSO-10RF plastic package, which offers high reliability and optimized RF performance.
Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm datasheet revision and ordering suffixes match requirements. Check for moisture sensitivity handling instructions during storage and assembly. Ensure compliance with RoHS directives if applicable to the specific manufacturing batch.
Select based on required operating frequency within the 1 GHz limit and desired output power levels. Consider the 28 V supply voltage constraint and thermal management needs given the junction-to-case thermal resistance. Evaluate impedance matching requirements using provided S-parameter data for the specific bias conditions.
This component belongs to the LdmoST Plastic Family of RF power transistors from STMicroelectronics. It is specifically engineered for high gain and broadband performance in surface-mount configurations. The PowerSO-10RF package represents a JEDEC-approved high-power SMD solution optimized for RF needs.
PD57002S serves as a direct alternative with straight leads instead of formed leads. Verify pinout compatibility and mechanical dimensions before substitution. Electrical characteristics remain consistent between the two variants.