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The PD57006STR-E is an N-Channel enhancement-mode lateral MOSFET RF power transistor from the LDMOST plastic family. It operates at 28 V in common source mode at frequencies up to 1 GHz, delivering 6 W output power with 15 dB gain at 945 MHz. The device features a drain-source voltage of 65 V, continuous drain current of 1 A, and maximum junction temperature of 165 °C. Packaged in PowerSO-10RF straight lead configuration on tape and reel, it offers excellent thermal stability and linearity for commercial and industrial applications.
Verify the specific ordering suffix STR-E confirms the straight lead package variant rather than formed leads. Confirm the tape and reel packing format matches automated assembly requirements. Check RoHS compliance status via ECOPACK specifications. Ensure the component meets JEDEC approval standards for high power SMD packages before finalizing procurement orders.
Select this component when designing circuits requiring 6 W output power at approximately 945 MHz. Ensure the design supports a 28 V supply voltage and accommodates the specified 165 °C maximum junction temperature. Verify that the PCB layout supports the PowerSO-10RF straight lead package dimensions and thermal dissipation needs for optimal RF performance.
This part belongs to the PD57006-E series of RF power transistors manufactured by STMicroelectronics. It utilizes the PowerSO-10RF package, which was the first ST JEDEC approved high power SMD package specifically optimized for RF needs. The series includes variants with formed or straight leads and tube or tape and reel packaging options.
PD57006S-E (Straight lead, Tube)
The device is designed to operate at frequencies up to 1 GHz.
The straight lead version (PD57006S-E/STR-E) has straight pins, whereas the formed lead version uses gull-wing shaped pins, both fitting the PowerSO-10RF footprint.
The typical power gain is 15 dB when operating at 28 V with 6 W output power at 945 MHz.