PD57006TR-E

Overview

The PD57006TR-E is an N-channel enhancement-mode lateral MOSFET from the LDMOST plastic family, designed for high-gain, broadband commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. Key electrical parameters include a drain-source voltage of 65 V, continuous drain current of 1 A, and power dissipation of 20 W. At 945 MHz with a 28 V supply and 70 mA bias current, it delivers 6 W output power with 15 dB gain and 50% drain efficiency. The device utilizes the PowerSO-10RF package.

Feature Summary

• LDMOST technology providing excellent thermal stability and reliability
• High gain performance suitable for broadband RF applications
• JEDEC approved SMD plastic RF power package optimized for assembly

Applications

• Car mobile radio systems
• Broadband commercial RF amplifiers
• Industrial RF power applications

Procurement Notes

Verify component authenticity through official STMicroelectronics channels or authorized distributors. Confirm the specific ordering suffix matches the required tape and reel packaging format. Ensure compliance with RoHS standards and ECOPACK environmental requirements before integration into production lines.

Selection Notes

Select this component for designs requiring high linearity and gain in the 900 MHz range. Evaluate thermal management strategies given the 5 °C/W junction-to-case resistance. Verify that the operating frequency and voltage levels remain within the specified absolute maximum ratings to ensure long-term device reliability.

Part Context

This part belongs to the PD57006-E series, which includes variants like PD57006S-E and PD57006STR-E. These devices represent ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, offering superior linearity compared to traditional packages.

Replacement Considerations

PD57006E

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 165 °C.

Does the device support common source configuration?

Yes, the PD57006 is designed as a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor.

What is the typical power gain at 945 MHz?

The typical power gain is 15 dB when operating at 945 MHz with a 28 V supply and 70 mA bias current.