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The PD57018S-E is an N-channel enhancement-mode lateral RF MOSFET transistor manufactured by STMicroelectronics. It operates at a drain-source voltage of 65 V and delivers a continuous drain current of 2.5 A with a maximum power dissipation of 31.7 W. The device features a minimum forward transconductance of 1 S and a typical on-resistance of 760 mOhms. Designed for high gain and broad band applications, it functions in common source mode at frequencies up to 1 GHz. The component utilizes the PowerSO-10RF-2 surface mount package and supports an operating temperature range from -65 °C to +165 °C.
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status via the manufacturer's latest datasheet before integration. Ensure supply chain partners provide valid traceability records for industrial grade components.
Select this component when designing circuits requiring stable lateral MOSFET performance at 28 V operation. Consider the 65 V breakdown voltage and 31.7 W dissipation limits relative to thermal management requirements. Evaluate the PowerSO-10RF-2 footprint compatibility during PCB layout planning.
This part belongs to the PD57018-E series of RF power transistors. The family includes variants such as the PD57018TR-E and PD57018-E, which share similar electrical characteristics but differ in packaging formats like tube or reel configurations.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal resistance equivalence if considering alternative lateral RF MOSFETs.