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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V POWERSO-10RF
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：945MHz
- Gain：16.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：2.5A
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：18W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PowerSO-10 Exposed Bottom Pad
- Supplier Device Package：PowerSO-10RF (Straight Lead)
- Configuration：-
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Overview
The PD57018STR-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from STMicroelectronics, designed for high gain and broad band commercial applications. It operates at 28 V in common source mode up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage of 65 V, continuous drain current of 2.5 A, and on-resistance of 760 mOhms. The device delivers 18 W output power with 16.5 dB gain at 945 MHz. It features a PowerSO-10RF-Formed-4 package, supports surface mount installation, and has a power dissipation rating of 31.7 W.
Feature Summary
- Common source configuration providing excellent thermal stability
- High gain performance suitable for broad band applications
- New RF plastic package optimized for ease of assembly
Applications
- Broad band commercial RF amplification
- Industrial RF signal processing
- Base station transmitter stages
Procurement Notes
Verify the specific suffix 'TR' indicates reel packaging versus tube variants like PD57018-E. Confirm RoHS compliance status via official datasheets as specifications may vary by production batch. Ensure compatibility with JEDEC approved mounting standards for the PowerSO-10RF package during integration.
Selection Notes
Select this component when 18 W output power at 945 MHz is required with 16.5 dB gain. The 65 V breakdown voltage suits 28 V supply systems. Consider the PowerSO-10RF package for SMT assembly needs. Verify thermal management requirements against the 31.7 W dissipation limit for the intended operating environment.
Part Context
This part belongs to the PD57018-E series of LDMOS plastic family transistors. It shares core electrical characteristics with the PD57018S-E but differs in packaging format. The series represents ST's latest LDMOS technology mounted in true SMD plastic RF power packages for improved reliability.
Replacement Considerations
PD57018S-E offers identical electrical performance in a tube packaged variant. PD57030-E provides higher output power (30 W) but lower gain (14 dB). Verify pinout and thermal pad configurations before substitution.
