PD57030

PD57030

$23.30
  • Description:RF MOSFET LDMOS 28V POWERSO10
  • Series:-

SKU:beedf9922f13 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V POWERSO10
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Technology:LDMOS
  • Frequency:945MHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):4A
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:30W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package:10-PowerSO
  • Configuration:-

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PD57030

Overview

The PD57030 is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST plastic family. It operates at 28 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include a drain-source voltage of 65 V, continuous drain current of 4 A, and maximum junction temperature of 165 °C. At 945 MHz and 28 V, it delivers 30 W output power with 14 dB gain and 53% drain efficiency. The device utilizes a PowerSO-10RF package with a thermal resistance of 1.8 °C/W.

Feature Summary

  • Common source configuration designed for high gain and broadband performance
  • Excellent thermal stability and superior linearity characteristics
  • JEDEC approved high power SMD plastic package optimized for RF needs

Applications

  • Broadband commercial applications
  • Industrial applications
  • Base station systems requiring high linearity

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified suppliers. Confirm datasheet revision status and ordering suffixes (PD57030 vs PD57030S) match specific lead requirements. Ensure storage conditions comply with humidity sensitivity levels specified in the documentation prior to assembly.

Selection Notes

Select based on required output power and gain specifications within the 1 GHz frequency range. Evaluate thermal management capabilities against the 1.8 °C/W junction-to-case resistance. Consider the PowerSO-10RF package dimensions for PCB layout constraints. Verify biasing requirements align with the 28 V operating voltage and 50 mA quiescent current typical values.

Part Context

This component belongs to the LdmoST Plastic Family of N-channel enhancement-mode lateral MOSFETs. It represents ST's integration of LDMOS technology into a surface-mountable plastic package. The PD57030 serves as a foundational device for RF power amplification, offering reliability improvements over previous ceramic packages while maintaining high performance metrics.

Replacement Considerations

The PD57030S variant shares identical electrical specifications but features straight leads instead of formed leads. Cross-reference with SD57030 series devices for similar performance profiles, noting potential differences in gain and package type.

PD57030PD57030
$23.30
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